semiconductors summary v (br)dss = 30v; r ds(on) = 0.025 i d = 9.0a description this new generation of trench mosfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? low profile soic package applications ? disconnect switches ? motor control device marking ? zxmn 3a02 ZXMN3A02N8 issue 4 - january 2005 1 30v n-channel enhancement mode mosfet device reel size tape width quantity per reel ZXMN3A02N8ta 7? 12mm 500 units ZXMN3A02N8tc 13? 12mm 2500 units ordering information top view pinout so8
ZXMN3A02N8 semiconductors issue 4 - january 2005 2 parameter symbol v alue unit junction to ambient (a) r ja 80 c/w junction to ambient (b) r ja 50 c/w notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t 10 secs. (c) repetitive rating 25mm x 25mm fr4 pcb, d = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. thermal resistance parameter symbol limit unit drain-source voltage v dss 30 v gate source voltage v gs 20 v continuous drain current v gs =-10v; t a =25c (b) v gs =-10v; t a =70c (b) v gs =-10v; t a =25c (a) i d 9.0 7.2 7.3 a pulsed drain current (c) i dm 44 a continuous source current (body diode) (b) i s 3.2 a pulsed source current (body diode) (c) i sm 44 a power dissipation at t a =25c (a) linear derating factor p d 1.56 12.5 w mw/c power dissipation at t a =25c (b) linear derating factor p d 2.5 20 w mw/c operating and storage temperature range t j :t stg -55 to +150 c absolute maximum ratings.
characteristics ZXMN3A02N8 semiconductors issue 4 - january 2005 3
ZXMN3A02N8 semiconductors issue 4 - january 2005 4 parameter symbol min. typ. max. unit conditions. static drain-source breakdown voltage v (br)dss 30 v i d =250 a, v gs =0v zero gate voltage drain current i dss 1 a v ds =30v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) 1.0 v i d =250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.025 0.035 v gs =10v, i d =12a v gs =4.5v, i d =10.2a forward transconductance (1)(3) g fs 22 s v ds =10v,i d =12a dynamic (3) input capacitance c iss 1400 pf v ds =25v, v gs =0v, f=1mhz output capacitance c oss 209 pf reverse transfer capacitance c rss 120 pf switching (2) (3) turn-on delay time t d(on) 3.9 ns v dd =10v, i d =1a r g ? 6.0 ? ,v gs =4.5v (refer to test circuit) rise time t r 5.5 ns turn-off delay time t d(off) 35.0 ns fall time t f 7.6 ns gate charge q g 14.5 nc v ds =15v,v gs =5v, i d =5.5a (refer to test circuit) total gate charge q g 26.8 nc v ds =15v,v gs =10v, i d =5.5a (refer to test circuit) gate-source charge q gs 4.7 nc gate-drain charge q gd 4.7 nc source-drain diode diode forward voltage (1) v sd 0.85 0.95 v t j =25c, i s =9a, v gs =0v reverse recovery time (3) t rr 17 ns t j =25c, i f =5.5a, di/dt= 100a/ s reverse recovery charge (3) q rr 8.3 nc electrical characteristics (at t amb = 25c unless otherwise stated). notes (1) measured under pulsed conditions. width 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
ZXMN3A02N8 semiconductors issue 4 - january 2005 5 characteristics
characteristics ZXMN3A02N8 semiconductors issue 4 - january 2005 6
ZXMN3A02N8 semiconductors issue 4 - january 2005 7 europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park chadderton, oldham, ol9 9ll united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex semiconductors plc 2005 dim inches millimetres min max min max a 0.053 0.069 1.35 1.75 a1 0.004 0.010 0.10 0.25 d 0.189 0.197 4.80 5.00 h 0.228 0.244 5.80 6.20 e 0.150 0.157 3.80 4.00 l 0.016 0.050 0.40 1.27 e 0.050 bsc 1.27 bsc b 0.013 0.020 0.33 0.51 c 0.008 0.010 0.19 0.25 0 8 0 8 h 0.010 0.020 0.25 0.50 package dimensions d e h l c e b seating plane seating plane pin 1 a1 a package outline controlling dimensions are in inches approx in millimetres
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